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| savantic semiconductor product specification silicon npn power transistors 2SD1270 d escription with to-220fa package low collector saturation voltage large collector current i c complement to type 2sb945 applications for power switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings at ta=25 symbol parameter conditions value unit v cbo collector-base voltage open emitter 130 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 5 a i cm collector current-peak 10 a t c =25 40 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1270 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma , i b =0 80 v v cesat collector-emitter saturation voltage i c =4a; i b =0.2a 0.5 v v besat base-emitter saturation voltage i c =4a ;i b =0.2a 1.5 v i cbo collector cut-off current v cb =100v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 50 a h fe-1 dc current gain i c =0.1a ; v ce =2v 45 h fe-2 dc current gain i c =2a ; v ce =2v 60 260 f t transition frequency i c =0.5a;v ce =10v;f=10mhz 30 mhz switching times t on turn-on time 0.5 s t s storage time 1.5 s t f fall time i c =2a ;i b1 =0.2a ;i b2 =-0.2a v cc =50v 0.15 s h fe-2 classifications r q p 60-120 90-180 130-260 savantic semiconductor product specification 3 silicon npn power transistors 2SD1270 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) savantic semiconductor product specification 4 silicon npn power transistors 2SD1270 |
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